bby 51-07 oct-05-1999 1 silicon tuning diode ? high q hyperabrupt dual tuning diode ? designed for low tuning voltage operation ? for vco's in mobile communications equipment vps05178 2 1 3 4 type marking pin configuration package bby 51-07 hhs 1 = c1 2 = c2 3 = a2 4 = a1 sot-143 maximum ratings parameter symbol value unit diode reverse voltage v r 7 v forward current i f 20 ma operating temperature range t op -55 ... 150 c storage temperature t st g -55 ... 150
bby 51-07 oct-05-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 6 v i r - - 10 na reverse current v r = 6 v, t a = 150 c i r - - 100 ac characteristics pf diode capacitance v r = 1 v, f = 1 mhz v r = 2 v, f = 1 mhz v r = 3 v, f = 1 mhz v r = 4 v, f = 1 mhz 5.3 4.2 3.5 3.1 4.8 3.6 2.9 2.6 c t 6 5 4.2 3.5 - capacitance ratio v r = 1 v, v r = 4 v, f = 1 mhz 1.55 2.15 1.75 c t1 / c t4 pf c 1v - c 3v capacitance difference v r = 1 v, v r = 3 v, f = 1 mhz 2.2 1.78 1.4 c 3v - c 4v capacitance difference v r = 3 v, v r = 4 v, f = 1 mhz 0.3 0.7 0.5 ? series resistance v r = 1 v, f = 1 ghz 0.37 - r s - case capacitance f = 1 mhz c c - 0.12 pf - 2 - series inductance l s nh -
bby 51-07 oct-05-1999 3 diode capacitance c t = f ( v r ) f = 1mhz v ehd07128 r t c 0 0v pf 2 4 6 8 10 2 4 6 temperature coefficient t cc = f ( v r ), per diode, f = 1mhz v ehd07129 r cc t ppa 10 0 1 10 10 2 10 3 10 4 10 1 10 2 c v 5
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